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Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors
Phillips, J.; Kamath, Kishore K.; Brock, T.; Bhattacharya, Pallab K.
(
The American Institute of Physics
,
)
Determination of the microscopic quality of InGaAs‐InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growth
Juang, Feng‐Yuh; Bhattacharya, Pallab K.; Singh, J.
(
The American Institute of Physics
,
)
Far‐infrared absorption spectra measured in InAs/Al0.36Ga0.64Sb quantum wells
Kim, Jae H.; Bhattacharya, Pallab K.; Singh, J.; Gulari, Erdogan
(
The American Institute of Physics
,
)
Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements
Yu, Young‐june; Bosman, Gijs; Bhattacharya, Pallab K.
(
The American Institute of Physics
,
)
Modeling growth of Si1−xGex epitaxial films from disilane and germane
Malik, Rajeev; Gulari, Erdogan; Li, Shin Hwa; Bhattacharya, Pallab K.
(
The American Institute of Physics
,
)
High‐quality Si‐implanted GaAs activated by a two‐step rapid thermal annealing technique
Seo, Kwang S.; Dhar, Sunanda; Bhattacharya, Pallab K.
(
The American Institute of Physics
,
)
Optical properties and Stokes shifts in lamp‐annealed InGaAs/GaAs strained layer superlattice
Kothiyal, Govind P.; Bhattacharya, Pallab K.
(
The American Institute of Physics
,
)
Growth and properties of InAsxSb1-x, AlyGa1-ySb, and InAsxSb1-x/AlyGa1-ySb heterostructures
Kim, J. H.; Yang, D.; Chen, Y. -C.; Bhattacharya, Pallab K.
(
Elsevier
,
)
Charge-density domains in photoexcited quantum-well structures
Merlin, R.; Mestres, N.; McKiernan, A.; Oh, J. E.; Bhattacharya, Pallab K.
(
Elsevier
,
)
Transmission electron microscopy of strained InyGa1−yAs/GaAs multiquantum wells: The generation of misfit dislocations
Chang, Kevin H.; Bhattacharya, Pallab K.; Gibala, Ronald
(
The American Institute of Physics
,
)
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