| dc.contributor |
Naval Postgraduate School (U.S.) |
|
| dc.contributor |
Department of Physics and Chemistry |
|
| dc.creator |
Pitthan, R. |
|
| dc.creator |
Buskirk, F. R. |
|
| dc.creator |
Dyer, N. |
|
| dc.creator |
Hunter, E. E. |
|
| dc.creator |
Pozinsky, G. |
|
| dc.date |
2016-01-07T22:13:24Z |
|
| dc.date |
2016-01-07T22:13:24Z |
|
| dc.date |
1979-02 |
|
| dc.date.accessioned |
2022-05-19T07:45:22Z |
|
| dc.date.available |
2022-05-19T07:45:22Z |
|
| dc.identifier |
Physical Review C, v. 19, no. 2 February 1979, pp. 299-309 |
|
| dc.identifier |
http://hdl.handle.net/10945/47485 |
|
| dc.identifier.uri |
http://localhost:8080/xmlui/handle/CUHPOERS/100181 |
|
| dc.description |
Inelastic electron scattering in (28)Si between 4 and 50 MeV excitation energy reveals two concentrations of E2 strength in the continuum. One is between 15 and 20 MeV, with a peak at 17 MeV, and can be identified with the giant quadrupole resonance in the ground state oblate well. A broad distribution of E2 strength between 22 and 42 MeV is predominantly isovector in nature. In addition, a small but persistent E2 peak at 24 MeV was found, which may be interpreted as being the corresponding state in the prolate well to the 17 MeV resonance. It is shown that 50% or more of the photon cross section in excess of the classical dipole sum rule between 10 MeV and the pion threshold may be due to E2 absorption. |
|
| dc.description |
Supported in part by the National Science Foundation and the Naval Postgraduate School Reearch Foundation |
|
| dc.description |
Approved for public release; distribution is unlimited. |
|
| dc.format |
11 p. |
|
| dc.format |
application/pdf |
|
| dc.publisher |
American Physical Society |
|
| dc.rights |
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States. |
|
| dc.title |
Distribution of E2 strength in Si28 below 50 MeV excitation energy |
|
| dc.type |
Article |
|