By using molecular beam epitaxy and post‐growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D‐shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III‐V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.
Peer Reviewed
http://deepblue.lib.umich.edu/bitstream/2027.42/70198/2/APPLAB-52-21-1768-1.pdf