| dc.contributor |
Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, United States |
|
| dc.contributor |
Materials and Structures Lab, Tokyo Institute of Technology, Midori‐ku, Yokohama, Japan |
|
| dc.creator |
Yu, Eric Kai‐hsiang |
|
| dc.creator |
Abe, Katsumi |
|
| dc.creator |
Kumomi, Hideya |
|
| dc.creator |
Kanicki, Jerzy |
|
| dc.date |
2013-07-08T17:45:34Z |
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| dc.date |
2014-08-01T19:11:40Z |
|
| dc.date |
2013-06 |
|
| dc.date.accessioned |
2022-05-19T11:08:30Z |
|
| dc.date.available |
2022-05-19T11:08:30Z |
|
| dc.identifier |
Yu, Eric Kai‐hsiang ; Abe, Katsumi; Kumomi, Hideya; Kanicki, Jerzy (2013). "16.3: AC and DC Biasâ Temperature Stability of Coplanar Homojunction aâ InGaZnO Thinâ Film Transistors." SID Symposium Digest of Technical Papers 44(1). <http://hdl.handle.net/2027.42/98792> |
|
| dc.identifier |
0097-966X |
|
| dc.identifier |
2168-0159 |
|
| dc.identifier |
https://hdl.handle.net/2027.42/98792 |
|
| dc.identifier |
10.1002/j.2168-0159.2013.tb06171.x |
|
| dc.identifier |
SID Symposium Digest of Technical Papers |
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| dc.identifier |
S.‐J. Kim, Y.‐W. Lee, S.‐Y. Lee, J.‐S. Woo, J.‐ Y. Kwon, and M.‐K. Han, “ The Effect of AC Bias Frequency on Threshold Voltage Shift of the Amorphous Oxide TFTs,” in SID Int. Symp. Dig. Tech. Papers 42, 1195 ( 2011 ). |
|
| dc.identifier |
C. S. Chiang, J. Kanick, and K. Takechi, “ Electrical Instability of Hydrogenated Amorphous Silicon Thin‐Film Transistors for Active‐Matrix Liquid‐Crystal Displays ”, Jpn. J. Appl. Phys. 37, 4704 – 4710 ( 1998 ). |
|
| dc.identifier |
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “ Room‐temperature fabrication of transparent flexible thin‐film transistors using amorphous oxide semiconductors ”, Nature 432, no. 7016, 488 – 492 ( 2004 ). |
|
| dc.identifier |
T. Kamiya, K. Nomura, and H. Hosono, “ Present Status of amorphous In‐Ga‐Zn‐O thin‐film transistors ”, Sci. Technol. Adv. Mater. 11, 044305 ( 2010 ). |
|
| dc.identifier |
C. J. Kim, D. S. Kang, I. Song, J. C. Park, H. Lim, S. Kim, E. Lee, R. Chung, J. C. Lee, and Y. Park, “ Highly stable Ga2O3‐In2O3‐ZnO TFT for active‐matrix organic light‐emitting diode display application,” in Proc. IEDM, 2006, pp. 1 – 4. |
|
| dc.identifier |
T.‐C. Fung, K. Abe, H. Kumom, and J. Kanicki, “ Electrical Instability of RF Sputter Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors ”, J. Display Technol. 5, 452 ( 2009 ). |
|
| dc.identifier |
J. Y. Kwon, J. S. Sung, K. S. Son, T. S. Kim, M. K. Ryu, K. B. Park, Y. S. Park, S. Y. Lee, and J. M. Kim, “ GaInZnO TFT for active matrix display,” in AM‐FPD '08 Dig. Tech. Papers, 2008, p. 287 – 290. |
|
| dc.identifier |
Y. Ohto, Y. Chikama, T. Hara, Y. Mizuno, T. Aita, M. Takei, M. Suzuki, O. Nakagawa, Y. Harumoto, H. Nishik, and N. Kimura, “ Amorphous In‐Ga‐Zn‐O TFT with high reliability,” in IDW '09 (The 16 th International Display Workshop), 1685 – 1688 ( 2009 ). |
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| dc.identifier |
A. Suresh and J. F. Muth, “ Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors ”, Appl. Phys. Lett. 93, 093504 ( 2008 ). |
|
| dc.identifier |
K. Nomura, T. Kamiya, and H. Hosono, “ Interface and bulk effects for bias—light‐illumination instability in amorphous‐In‐Ga‐Zn‐O thin‐film transistors ”, J. Soc. Info. Display 18, 789 ( 2010 ). |
|
| dc.identifier |
T.‐C. Fung, K. Abe, H. Kumom, and J. Kanicki, “ DC/AC Electrical of R.F. Sputter Amorphous In‐Ga‐Zn‐O TFTs ”, In SID Int. Symp. Dig. Tech. Papers 40, 1117 ( 2009 ). |
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| dc.identifier |
S.‐J. Kim, S.‐Y. Lee, Y. W. Lee, S.‐H. Kuk, J.‐Y. Kwon, and M.‐K. Han, “ Effect of Charge Trapping/Detrapping on Threshold Voltage Shift of IGZO TFTs under AC Bias Stress ”, Electrochem. Solid-State Lett. 15, H108 – H110 ( 2012 ). |
|
| dc.identifier.uri |
http://localhost:8080/xmlui/handle/CUHPOERS/103127 |
|
| dc.description |
We fabricated coplanar homojunction a‐IGZO TFTs that are highly stable under AC and DC bias‐temperature‐stress. For TFTs of the size W/L = 60μm/10μm, the stress‐induced threshold voltage shifts are all within −0.35 V. A comprehensive investigation of AC BTS stress polarity, pulse width, and duty cycle dependence is presented We find that higher frequency of bipolar AC pulses increases the device instability, while lower duty cycle values have the opposite effect. |
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| dc.description |
Peer Reviewed |
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| dc.description |
http://deepblue.lib.umich.edu/bitstream/2027.42/98792/1/j.2168-0159.2013.tb06171.x.pdf |
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| dc.format |
application/pdf |
|
| dc.publisher |
Blackwell Publishing Ltd |
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| dc.publisher |
Wiley Periodicals, Inc. |
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| dc.rights |
IndexNoFollow |
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| dc.subject |
Stress |
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| dc.subject |
BTS |
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| dc.subject |
Oxide |
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| dc.subject |
TFT |
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| dc.subject |
A‐IGZO |
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| dc.subject |
Instability |
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| dc.subject |
AC |
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| dc.subject |
Electrical Engineering |
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| dc.subject |
Engineering |
|
| dc.title |
16.3: AC and DC Bias‐Temperature Stability of Coplanar Homojunction a‐InGaZnO Thin‐Film Transistors |
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| dc.type |
Article |
|