| dc.contributor |
Intense Energy Beam Interaction Laboratory, Nuclear Engineering and Radiological Sciences Department, University of Michigan, Ann Arbor, Michigan, 48109-2104, USA |
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| dc.contributor |
Intense Energy Beam Interaction Laboratory, Nuclear Engineering and Radiological Sciences Department, University of Michigan, Ann Arbor, Michigan, 48109-2104, USA |
|
| dc.contributor |
Intense Energy Beam Interaction Laboratory, Nuclear Engineering and Radiological Sciences Department, University of Michigan, Ann Arbor, Michigan, 48109-2104, USA |
|
| dc.contributor |
Intense Energy Beam Interaction Laboratory, Nuclear Engineering and Radiological Sciences Department, University of Michigan, Ann Arbor, Michigan, 48109-2104, USA |
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| dc.contributor |
Advanced Materials Technology, Timken Research, The Timken Corporation, Canton, Ohio, 44706-0939, USA |
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| dc.contributor |
Ann Arbor |
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| dc.creator |
Lau, Y. Y. |
|
| dc.creator |
Qi, Bo |
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| dc.creator |
Doll, G. L. |
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| dc.creator |
Gilgenbach, Ronald M. |
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| dc.creator |
Jones, M. C. |
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| dc.date |
2006-09-11T18:31:11Z |
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| dc.date |
2006-09-11T18:31:11Z |
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| dc.date |
2004-09 |
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| dc.date.accessioned |
2022-05-19T13:29:10Z |
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| dc.date.available |
2022-05-19T13:29:10Z |
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| dc.identifier |
Jones, M.C.; Gilgenbach, R.M.; Qi, B.; Lau, Y.Y.; Doll, G.L.; (2004). "Ablation plasma ion implantation using a dc power supply." Applied Physics A 79 (4-6): 969-971. <http://hdl.handle.net/2027.42/47038> |
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| dc.identifier |
0947-8396 |
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| dc.identifier |
1432-0630 |
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| dc.identifier |
https://hdl.handle.net/2027.42/47038 |
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| dc.identifier |
http://dx.doi.org/10.1007/s00339-004-2585-2 |
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| dc.identifier |
Applied Physics A |
|
| dc.identifier.uri |
http://localhost:8080/xmlui/handle/CUHPOERS/117223 |
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| dc.description |
Experiments are reported in which ablation plasma ion implantation (APII) has been demonstrated using a dc power supply. The ability to use a dc power supply for APII has been accomplished by using a perpendicular orientation between the target and the substrate. This perpendicular orientation significantly reduces the arcing between the target and the substrate, in contrast to previous experiments using a parallel target–substrate orientation. With this new technique a KrF laser may be fired during the dc high voltage, accelerating full-energy ions. Initial experiments using dc APII have shown that Ti is deposited and implanted onto the Si substrate, with the highest concentration of Ti located beneath the surface of the film. The deposition/implantation of Ti ions onto Si was verified by X-ray photoelectron spectroscopy. |
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| dc.description |
Peer Reviewed |
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| dc.description |
http://deepblue.lib.umich.edu/bitstream/2027.42/47038/1/339_2004_Article_2585.pdf |
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| dc.format |
218026 bytes |
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| dc.format |
3115 bytes |
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| dc.format |
application/pdf |
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| dc.format |
text/plain |
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| dc.format |
application/pdf |
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| dc.language |
en_US |
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| dc.publisher |
Springer-Verlag |
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| dc.subject |
Physics |
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| dc.subject |
Physics |
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| dc.subject |
Mathematics |
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| dc.subject |
Science |
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| dc.title |
Ablation plasma ion implantation using a dc power supply |
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| dc.type |
Article |
|