Sangam: A Confluence of Knowledge Streams

High Performance RF-MEMS Tunable Filters.

Show simple item record

dc.contributor Mortazawi, Amir
dc.contributor Rebeiz, Gabriel Michael
dc.contributor Moghaddam, Mahta
dc.contributor Winick, Kim A.
dc.creator Park, Sang-June
dc.date 2008-05-08T19:15:57Z
dc.date NO_RESTRICTION
dc.date 2008-05-08T19:15:57Z
dc.date 2008
dc.date 2008
dc.date.accessioned 2022-05-19T13:29:35Z
dc.date.available 2022-05-19T13:29:35Z
dc.identifier https://hdl.handle.net/2027.42/58503
dc.identifier.uri http://localhost:8080/xmlui/handle/CUHPOERS/117271
dc.description This thesis presents high-Q tunable filter RF-MEMS and Schottky diode fillters for the 1-6 GHz frequency range. A new admittance matrix filter design method has been developed, and several hybrid-coupling filters were analyzed and designed using this method. The source-load impedance loading is also introduced, and this enables a filter design with an arbitrary loss. These design principles were applied to several filter examples and proved to be very useful, especially for ones with intricate geometries. With the unique independent electric and magnetic coupling filter topology, low-loss tunable (Schottky varactor diode) filters with three different fractional-bandwidth variations (constant, decreasing, and increasing fractional-bandwidth) are obtained. The measured filters have frequency tuning ranges of 800-1400 MHz, and their insertion-loss, and Qu are 1.0-3.0 dB and 60-150, respectively. These planar tunable filters represent the state-of-the-art insertion loss performance in this frequency range. For RF-MEMS tunable filters, the lossy coupling between the resonant electric field and bias-lines is first addressed, and a high-Q multi-bit orthogonal RF-MEMS capacitance network is introduced. As a result, a state-of the-art 4-6 GHz multi-bit RF-MEMS tunable filter is realized with a measured insertion loss and Qu of 1.5-2.8 and 85-170, respectively. To author's knowledge, this is the highest-Q tunable planar filter to-date at this frequency range. A 5.10-5.80 GHz CPW RF-MEMS switchable filter with mirrored transmission zero responses is also introduced, and an isolation enhancement of > 10 dB between two frequency bands is realized. Finally, a very high-Q evanescent-mode tunable filter with a novel high-Q RF-MEMS cantilever-switch capacitance network is presented. The loss mechanisms of the RF-MEMS capacitance network in the high-Q evanescent-mode resonator are investigated and a bias-line metal-bridge cover and an RC network in the bias-path are introduced. The measured filter frequencies, done on fixed capacitance value prototypes, their insertion loss, and Qu values are 4.19-6.59 GHz, 2.46-1.28 dB, and 538-845, respectively.
dc.description Ph.D.
dc.description Electrical Engineering
dc.description University of Michigan, Horace H. Rackham School of Graduate Studies
dc.description http://deepblue.lib.umich.edu/bitstream/2027.42/58503/1/sangjp_1.pdf
dc.format 4438977 bytes
dc.format 1373 bytes
dc.format application/pdf
dc.format text/plain
dc.format application/pdf
dc.language en_US
dc.subject This Thesis Presents High-Q Tunable Filter RF-MEMS and Schottky Diode Fillters for the 1-6 GHz Frequency Range.
dc.subject Electrical Engineering
dc.subject Engineering
dc.title High Performance RF-MEMS Tunable Filters.
dc.type Thesis


Files in this item

Files Size Format View
sangjp_1.pdf 4.438Mb application/pdf View/Open

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Advanced Search

Browse