Sangam: A Confluence of Knowledge Streams

Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy

Show simple item record

dc.contributor Korolkov, Vladimir V.
dc.contributor Cheng, Tin
dc.contributor Cho, Yongjin
dc.contributor Mellor, Chris
dc.contributor Foxon, Tom
dc.contributor Novikov, Sergei
dc.contributor Eaves, Laurence
dc.contributor Khlobystov, Andrei
dc.creator Beton, Peter
dc.creator Summerfield, Alex
dc.creator Davies, Andrew
dc.date 2016-04-14T09:31:08Z
dc.date 2016-04-14T09:31:08Z
dc.date 2016-02-01
dc.identifier https://rdmc.nottingham.ac.uk/handle/internal/38
dc.identifier http://doi.org/10.17639/nott.35
dc.description Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene.
dc.language en
dc.publisher University of Nottingham
dc.relation 10.1038/srep22440
dc.subject Epitaxy
dc.subject Graphene -- Mechanical properties
dc.subject Strains and stresses
dc.subject JACS Subjects::Physical sciences::Materials science
dc.subject JACS Subjects::Physical sciences::Physics::Chemical physics, Solid-state physics
dc.subject JACS Subjects::Physical sciences::Chemistry::Physical chemistry
dc.subject Library of Congress Subject Areas::Q Science::QC Physics::QC170 Atomic physics. Constitution and properties of matter
dc.subject Library of Congress Subject Areas::Q Science::QD Chemistry::QD450 Physical and theoretical chemistry
dc.title Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy
dc.type dataset


Files in this item

Files Size Format View
AFM and Raman Spectral Data.zip 12.43Gb application/octet-stream View/Open
Read me.txt 566bytes text/plain View/Open

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Advanced Search

Browse