Sangam: A Confluence of Knowledge Streams

Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe

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dc.creator Balakrishnan, Nilanthy
dc.creator Patane, Amalia
dc.creator Beton, Peter
dc.date 2018-05-21T14:20:22Z
dc.date 2018-05-21T14:20:22Z
dc.date 2018-05
dc.date August 2016 - February 2018
dc.identifier https://rdmc.nottingham.ac.uk/handle/internal/359
dc.identifier http://doi.org/10.17639/nott.355
dc.description We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of ε-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, X-ray photoelectron and electron dispersive X-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to ~ 2 eV suitable for exploitation in electronics and optoelectronics.
dc.language en
dc.publisher The University of Nottingham
dc.relation 10.1088/2053-1583/aac479
dc.subject Indium compounds
dc.subject Semiconductors -- Optical properties
dc.subject Photoluminescence
dc.subject Stoichiometry
dc.subject Indium Selenide, III-VI van der Waals layered crystals, 2D materials, physical vapour transport
dc.subject Physical sciences::Physics::Optical physics, Laser physics
dc.subject Physical sciences::Physics::Applied physics, Engineering physics
dc.subject Q Science::QC Physics::QC350 Optics. Light, including spectroscopy
dc.subject Q Science::QC Physics::QC170 Atomic physics. Constitution and properties of matter
dc.title Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
dc.type dataset
dc.coverage Nottingham, UK


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AFM of growth on bulk GaSe.jpg 162.5Kb image/jpeg View/Open
EDX of growth on bulk GaSe.docx 2.162Mb application/vnd.openxmlformats-officedocument.wordprocessingml.document View/Open
EXD of growth on exfoliated GaSe layers.docx 6.239Mb application/vnd.openxmlformats-officedocument.wordprocessingml.document View/Open
Power dependent PL of gamma-In2Se3.opj 2.513Mb application/octet-stream View/Open
Raman of InxSey ... exfoliated GaSe layers.opj 151.9Kb application/octet-stream View/Open
Room temperature and low temperature PL.opj 4.003Mb application/octet-stream View/Open
Temperature dependent PL of gamma-In2Se3.opj 6.634Mb application/octet-stream View/Open
XPS of growth on bulk GaSe.opj 213.8Kb application/octet-stream View/Open

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