Sangam: A Confluence of Knowledge Streams

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

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dc.creator Kühn, Jutta
dc.date 2021-02-11T08:02:16Z
dc.date 2021-02-11T08:02:16Z
dc.date 2019-07-30 20:02:02
dc.date 2011
dc.date.accessioned 2023-02-18T19:28:35Z
dc.date.available 2023-02-18T19:28:35Z
dc.identifier 35656
dc.identifier 18684696
dc.identifier https://directory.doabooks.org/handle/20.500.12854/40629
dc.identifier https://www.ksp.kit.edu/9783866446151
dc.identifier.uri http://localhost:8080/xmlui/handle/CUHPOERS/249539
dc.description This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
dc.format image/jpeg
dc.language eng
dc.publisher KIT Scientific Publishing
dc.relation Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik
dc.rights open access
dc.subject T1-995
dc.subject MMIC design
dc.subject power amplifier
dc.subject AlGaN/GaN HEMT
dc.subject X-band
dc.subject power-added efficiency
dc.title AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
dc.resourceType book
dc.alternateIdentifier 9783866446151
dc.alternateIdentifier 10.5445/KSP/1000021579
dc.licenseCondition Attribution-NonCommercial-NoDerivatives 4.0 International
dc.identifierdoi 10.5445/KSP/1000021579
dc.relationisPublishedBy 68fffc18-8f7b-44fa-ac7e-0b7d7d979bd2
dc.relationisbn 9783866446151
dc.pages XI, 230 p.


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