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Si1-yCy Epitaxy from Disilane and Trimethylsilane by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition.
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Si1-yCy Epitaxy from Disilane and Trimethylsilane by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition.
Kwak, Byung-Il
URI:
http://localhost:8080/xmlui/handle/CUHPOERS/265752
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