Sangam: A Confluence of Knowledge Streams

Si1-yCy Epitaxy from Disilane and Trimethylsilane by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition.

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dc.contributor Mehmet Ozturk, Chair
dc.contributor Veena Misra, Member
dc.contributor Michael Escuti, Member
dc.contributor Mark Johnson, Member
dc.creator Kwak, Byung-Il
dc.date 2011-08-03T07:00:38Z
dc.date 2011-08-03T07:00:38Z
dc.date 2010-12-20
dc.date 2011-01-03
dc.date 2011-05-02
dc.date 2010-12-20
dc.date 2011-08-03
dc.date 2011-01-05
dc.date.accessioned 2023-02-28T17:08:50Z
dc.date.available 2023-02-28T17:08:50Z
dc.identifier deg533
dc.identifier http://www.lib.ncsu.edu/resolver/1840.16/7111
dc.identifier.uri http://localhost:8080/xmlui/handle/CUHPOERS/265753
dc.rights
dc.title Si1-yCy Epitaxy from Disilane and Trimethylsilane by Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition.


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