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Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] PassivationGate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al2O3 Passivation
Guo, Shiping; Tirado, Jose M.; Gao, Xiang; Saadat, Omair Irfan; Chung, Jae W.; Palacios, Tomas
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Institute of Electrical and Electronics Engineers
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