Sangam: A Confluence of Knowledge Streams

Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

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dc.contributor Massachusetts Institute of Technology. Department of Materials Science and Engineering
dc.contributor Gradecak, Silvija
dc.contributor Reich, Stephanie
dc.contributor Brewster, Megan Marie
dc.contributor Gradecak, Silvija
dc.creator Schimek, Oliver
dc.creator Reich, Stephanie
dc.creator Brewster, Megan Marie
dc.creator Gradecak, Silvija
dc.date 2010-03-11T19:26:39Z
dc.date 2010-03-11T19:26:39Z
dc.date 2009-11
dc.date 2009-10
dc.date.accessioned 2023-03-01T18:10:35Z
dc.date.available 2023-03-01T18:10:35Z
dc.identifier 1550-235X
dc.identifier 1098-0121
dc.identifier http://hdl.handle.net/1721.1/52518
dc.identifier Brewster, Megan et al. “Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy.” Physical Review B 80.20 (2009): 201314. © 2009 The American Physical Society
dc.identifier.uri http://localhost:8080/xmlui/handle/CUHPOERS/279036
dc.description The Fröhlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap E[subscript g]2. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees well with a two-phonon-scattering model, suggesting excitonic scattering. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems and in GaAs at E[subscript g], allowing for the development and optimization of nanowire optoelectronic devices.
dc.format application/pdf
dc.language en_US
dc.publisher American Physical Society
dc.relation http://dx.doi.org/10.1103/PhysRevB.80.201314
dc.relation Physical Review B
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.source APS
dc.title Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy
dc.type Article
dc.type http://purl.org/eprint/type/JournalArticle


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