dc.contributor |
Massachusetts Institute of Technology. Department of Materials Science and Engineering |
|
dc.contributor |
Gradecak, Silvija |
|
dc.contributor |
Reich, Stephanie |
|
dc.contributor |
Brewster, Megan Marie |
|
dc.contributor |
Gradecak, Silvija |
|
dc.creator |
Schimek, Oliver |
|
dc.creator |
Reich, Stephanie |
|
dc.creator |
Brewster, Megan Marie |
|
dc.creator |
Gradecak, Silvija |
|
dc.date |
2010-03-11T19:26:39Z |
|
dc.date |
2010-03-11T19:26:39Z |
|
dc.date |
2009-11 |
|
dc.date |
2009-10 |
|
dc.date.accessioned |
2023-03-01T18:10:35Z |
|
dc.date.available |
2023-03-01T18:10:35Z |
|
dc.identifier |
1550-235X |
|
dc.identifier |
1098-0121 |
|
dc.identifier |
http://hdl.handle.net/1721.1/52518 |
|
dc.identifier |
Brewster, Megan et al. “Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy.” Physical Review B 80.20 (2009): 201314. © 2009 The American Physical Society |
|
dc.identifier.uri |
http://localhost:8080/xmlui/handle/CUHPOERS/279036 |
|
dc.description |
The Fröhlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap E[subscript g]2. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees well with a two-phonon-scattering model, suggesting excitonic scattering. These results advance the understanding of electron-phonon coupling and exciton scattering in quasi-one-dimensional systems and in GaAs at E[subscript g], allowing for the development and optimization of nanowire optoelectronic devices. |
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dc.format |
application/pdf |
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dc.language |
en_US |
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dc.publisher |
American Physical Society |
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dc.relation |
http://dx.doi.org/10.1103/PhysRevB.80.201314 |
|
dc.relation |
Physical Review B |
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dc.rights |
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. |
|
dc.source |
APS |
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dc.title |
Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy |
|
dc.type |
Article |
|
dc.type |
http://purl.org/eprint/type/JournalArticle |
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