| dc.contributor |
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
|
| dc.contributor |
Massachusetts Institute of Technology. Research Laboratory of Electronics |
|
| dc.creator |
Albo, Asaf |
|
| dc.creator |
Flores, Yuri V |
|
| dc.creator |
Hu, Qing |
|
| dc.creator |
Reno, John L |
|
| dc.date |
2021-10-27T20:34:13Z |
|
| dc.date |
2021-10-27T20:34:13Z |
|
| dc.date |
2019 |
|
| dc.date |
2019-06-06T12:34:49Z |
|
| dc.date.accessioned |
2023-03-01T18:11:03Z |
|
| dc.date.available |
2023-03-01T18:11:03Z |
|
| dc.identifier |
https://hdl.handle.net/1721.1/136195 |
|
| dc.identifier.uri |
http://localhost:8080/xmlui/handle/CUHPOERS/279067 |
|
| dc.description |
© 2019 Author(s). We present a so-called "split-well direct-phonon" active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the lower laser level. Negative differential resistance is observed at room temperature, which indicates that each module behaves as a clean 3-level system. We further use this design to investigate the impact of temperature on the dephasing time of GaAs/AlGaAs THz-QCLs. |
|
| dc.format |
application/pdf |
|
| dc.language |
en |
|
| dc.publisher |
AIP Publishing |
|
| dc.relation |
10.1063/1.5089854 |
|
| dc.relation |
Applied Physics Letters |
|
| dc.rights |
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. |
|
| dc.source |
Other repository |
|
| dc.title |
Split-well direct-phonon terahertz quantum cascade lasers |
|
| dc.type |
Article |
|
| dc.type |
http://purl.org/eprint/type/JournalArticle |
|