Sangam: A Confluence of Knowledge Streams

Dirac-surface-state-dominated spin to charge current conversion in the topological insulator (Bi[subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] films at room temperature

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dc.contributor Massachusetts Institute of Technology. Department of Physics
dc.contributor Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
dc.contributor Moodera, Jagadeesh
dc.contributor Chang, Cui-zu
dc.creator Mendes, J. B. S.
dc.creator Alves Santos, O.
dc.creator Holanda, J.
dc.creator Loreto, R. P.
dc.creator de Araujo, C. I. L.
dc.creator Azevedo, A.
dc.creator Rezende, S. M.
dc.creator Moodera, Jagadeesh
dc.creator Chang, Cui-zu
dc.date 2017-12-21T19:38:19Z
dc.date 2017-12-21T19:38:19Z
dc.date 2017-11
dc.date 2017-08
dc.date 2017-11-28T18:00:10Z
dc.date.accessioned 2023-03-01T18:11:16Z
dc.date.available 2023-03-01T18:11:16Z
dc.identifier 2469-9950
dc.identifier 2469-9969
dc.identifier http://hdl.handle.net/1721.1/112924
dc.identifier Mendes, J. B. S., et al. “Dirac-Surface-State-Dominated Spin to Charge Current Conversion in the Topological Insulator (Bi{subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] Films at Room Temperature.” Physical Review B, vol. 96, no. 18, Nov. 2017. © 2017 American Physical Society
dc.identifier https://orcid.org/0000-0002-2480-1211
dc.identifier https://orcid.org/0000-0001-7413-5715
dc.identifier.uri http://localhost:8080/xmlui/handle/CUHPOERS/279080
dc.description We report the spin-to-charge current conversion in an intrinsic topological insulator (TI) (Bi[subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, the spin pumping effect (SPE) and the spin Seebeck effect (SSE). In the first, we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI (Bi[subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] layer in direct contact with Py. In the second, we use the SSE in the longitudinal configuration in Py without contamination by the anomalous Nernst effect, which was made possible with a thin NiO layer between the Py and (Bi[subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] layers. The spin-to-charge current conversion is dominated by the TI surface states and is attributed to the inverse Edelstein effect (IEE), which is made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators.
dc.description National Science Foundation (U.S.) (Grant DMR12074609)
dc.description National Science Foundation (U.S.) (Grants DMR-1700137)
dc.description National Science Foundation (U.S.) (Grant DMR-0819762)
dc.description United States. Office of Naval Research (Grant N00014-16-1-2657)
dc.description National Science Foundation (U.S.) (STC Center for Integrated Quantum Materials. Grant DMR-1231319)
dc.format application/pdf
dc.language en
dc.publisher American Physical Society
dc.relation http://dx.doi.org/10.1103/PhysRevB.96.180415
dc.relation Physical Review B
dc.rights Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
dc.rights American Physical Society
dc.source American Physical Society
dc.title Dirac-surface-state-dominated spin to charge current conversion in the topological insulator (Bi[subscript 0.22]Sb[subscript 0.78])[subscript 2]Te[subscript 3] films at room temperature
dc.type Article
dc.type http://purl.org/eprint/type/JournalArticle


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