Sangam: A Confluence of Knowledge Streams

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

Show simple item record

dc.contributor Electrical and Computer Engineering
dc.creator Li, Mi-Feng
dc.creator Yu, Ying
dc.creator He, Ji-Fang
dc.creator Wang, Li-Juan
dc.creator Zhu, Yan
dc.creator Shang, Xiang-jun
dc.creator Ni, Hai-Qiao
dc.creator Niu, Zhi-Chuan
dc.date 2013-03-13T00:09:34Z
dc.date 2013-03-13T00:09:34Z
dc.date 2013-02-18
dc.date 2013-03-13T00:09:35Z
dc.date.accessioned 2023-03-01T18:52:34Z
dc.date.available 2023-03-01T18:52:34Z
dc.identifier Nanoscale Research Letters. 2013 Feb 18;8(1):86
dc.identifier http://hdl.handle.net/10919/19283
dc.identifier https://doi.org/10.1186/1556-276X-8-86
dc.identifier.uri http://localhost:8080/xmlui/handle/CUHPOERS/281633
dc.description A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.
dc.description Published version
dc.format application/pdf
dc.format text/xml
dc.format application/pdf
dc.language en_US
dc.rights Creative Commons Attribution 4.0 International
dc.rights http://creativecommons.org/licenses/by/4.0/
dc.rights Mi-Feng Li et al.; licensee BioMed Central Ltd.
dc.title In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
dc.title Nanoscale Research Letters
dc.type Article - Refereed
dc.type Text


Files in this item

Files Size Format View
1556-276X-8-86.pdf 1.545Mb application/pdf View/Open
1556-276X-8-86.xml 33.49Kb text/xml View/Open

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Advanced Search

Browse