dc.contributor |
Electrical and Computer Engineering |
|
dc.creator |
Li, Mi-Feng |
|
dc.creator |
Yu, Ying |
|
dc.creator |
He, Ji-Fang |
|
dc.creator |
Wang, Li-Juan |
|
dc.creator |
Zhu, Yan |
|
dc.creator |
Shang, Xiang-jun |
|
dc.creator |
Ni, Hai-Qiao |
|
dc.creator |
Niu, Zhi-Chuan |
|
dc.date |
2013-03-13T00:09:34Z |
|
dc.date |
2013-03-13T00:09:34Z |
|
dc.date |
2013-02-18 |
|
dc.date |
2013-03-13T00:09:35Z |
|
dc.date.accessioned |
2023-03-01T18:52:34Z |
|
dc.date.available |
2023-03-01T18:52:34Z |
|
dc.identifier |
Nanoscale Research Letters. 2013 Feb 18;8(1):86 |
|
dc.identifier |
http://hdl.handle.net/10919/19283 |
|
dc.identifier |
https://doi.org/10.1186/1556-276X-8-86 |
|
dc.identifier.uri |
http://localhost:8080/xmlui/handle/CUHPOERS/281633 |
|
dc.description |
A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer. |
|
dc.description |
Published version |
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dc.format |
application/pdf |
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dc.format |
text/xml |
|
dc.format |
application/pdf |
|
dc.language |
en_US |
|
dc.rights |
Creative Commons Attribution 4.0 International |
|
dc.rights |
http://creativecommons.org/licenses/by/4.0/ |
|
dc.rights |
Mi-Feng Li et al.; licensee BioMed Central Ltd. |
|
dc.title |
In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots |
|
dc.title |
Nanoscale Research Letters |
|
dc.type |
Article - Refereed |
|
dc.type |
Text |
|